Author Affiliations
Abstract
The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Hybrid octagonal-ring microlasers are investigated for realizing a stable output from a silicon waveguide based on a two-dimensional simulation. The inner radius of the ring is optimized to achieve single-mode and low-threshold operation. Using the divinylsiloxane-benzocyclobutene (DVS-BCB) bonding technique, a hybrid AlGaInAs/Si octagonal-ring microlaser vertically coupled to a silicon waveguide is fabricated with a side length of 21.6 μm and an inner radius of 15 μm. A single transverse-mode operation is achieved with a threshold current density of 0.8 kA/cm2 and a side-mode suppression ratio above 30 dB, and a stable output from the lower silicon waveguide is obtained.
140.3948 Microcavity devices 250.5960 Semiconductor lasers 250.5300 Photonic integrated circuits Chinese Optics Letters
2016, 14(3): 031402
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
The mode characteristics are investigated for the rectangular microresonators with an output waveguide connected to the midpoint of the long side for wide and continuous wavelength tuning. Through adjusting the aspect ratio of the rectangular microresonator, the mode Q factors can be greatly enhanced. Furthermore, the large mode interval between the high-Q modes makes the rectangular microresonators suitable for tunable lasers. As a special case, single-mode operation is achieved with a continuous tuning range of 9.1 nm for a square microlaser with the side length of 17.8 mm and the output waveguide width of 1.8 μm.
rectangular microresonator rectangular microresonator semiconductor laser semiconductor laser tunable laser tunable laser Frontiers of Optoelectronics
2016, 9(3): 412
中国科学院半导体研究所集成光电子学国家重点联合实验室, 北京 100083
硅基键合III-V 材料激光器，作为互补氧化物半导体(CMOS)兼容硅基光互连系统中的一个关键元件，近年来引起了人们的高度重视并得到了广泛的研究。金属限制结构可以增强器件对光场的限制，提高界面反射率和工艺容差，从而实现小体积低能耗硅片上集成光源。对金属限制介质辅助键合III-V/硅基混合集成激光器进行了研究，介绍了该激光器的基本原理和实验方案，并对制作的不同结构激光器的特性进行了分析，该研究工作的开展将有助于实现III-V/硅基混合集成激光器在低能耗高带宽的硅基光互连中的应用。
半导体激光器 晶片键合 III-V/硅基混合集成 金属限制 激光与光电子学进展
2014, 51(11): 110010
